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The RN4906FE,LF is a pre-biased digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP bipolar junction transistor within an ES6 package. The device features built-in bias resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA for both transistors. The typical base resistor (R1) is 4.7 kOhms, with an emitter-base resistor (R2) of 47 kOhms. The unit has a maximum power dissipation of 100mW and a transition frequency of 200MHz to 250MHz.
Verify the specific suffix LF(CT) against the manufacturer's official documentation to confirm packaging type and compliance status. Ensure the source document explicitly identifies the part as RN4906FE,LF(CT from Toshiba Semiconductor and Storage. Cross-reference the ES6 package marking and electrical specifications with the latest datasheet to avoid substitution errors with similar RN49xx series parts.
Select this component when a dual NPN/PNP configuration with integrated biasing is required in space-constrained designs. The 4.7kOhm base resistor value suits standard logic interface levels. Verify that the 100mW power dissipation rating meets the thermal requirements of the target application environment compared to higher-power alternatives like the US6 packaged variants.
This part belongs to Toshiba's RN49xx series of pre-biased digital transistors. These devices are designed to replace discrete transistor-resistor networks. The FE variant typically denotes the ES6 package format, distinguishing it from the standard US6 package found in other series members like the RN4906 or RN4907.
Publicly confirmed substitute part numbers for RN4906FE,LF(CT were not identified in the provided reference material. Engineers should consult Toshiba's official cross-reference guides or equivalent product selection tables for verified replacements.