SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN4906,LF is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a compact US6 surface-mount package. The device features built-in bias resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA for both transistors. The typical base resistor value is 4.7 kOhms with an emitter-base resistor of 47 kOhms. It offers a minimum DC current gain (hFE) of 80 at 10mA and 5V, with a transition frequency of 200MHz. Maximum power dissipation is rated at 200mW.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and compliance status. Confirm that the component meets AEC-Q101 qualification requirements if automotive application standards are necessary. Cross-reference the datasheet revision history to validate parameter consistency before finalizing procurement orders.
Select this component when a compact solution for simultaneous NPN and PNP switching is required. The integrated bias network eliminates the need for external base resistors, saving board space. Ensure the 50V voltage rating and 100mA current capacity align with the target load requirements. Verify thermal management capabilities given the 200mW power dissipation limit in the US6 package.
The RN4906,LF belongs to the RN49xx series of pre-biased transistor arrays from Toshiba. This series utilizes silicon epitaxial planar technology (PCT Process) to achieve reliable performance in small form factors. The US6 package provides a footprint suitable for high-density surface mount assembly processes commonly used in modern consumer and industrial electronics.
RN4905,LF(CT: Offers similar functionality but with different internal resistor values (R1=2.2kΩ). RN4907,LF: Features higher base resistance (R1=10kΩ). RN4986FE,LF(CT: Available in ES6 package with comparable electrical characteristics.