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The RN4907,LF is a dual pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP epitaxial transistor within a single US6 surface-mount package. The device features built-in bias resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA for both transistors. The DC current gain (hFE) has a minimum value of 80 at 10mA and 5V. The transition frequency is rated at 200MHz, with a maximum power dissipation of 200mW. Internal resistor values are specified as R1 = 10kΩ and R2 = 47kΩ.
Verify component authenticity through official Toshiba Semiconductor and Storage channels or authorized distributors. Confirm the specific ordering suffix matches the required packaging format, such as tape and reel or cut tape. Ensure compliance with RoHS3 regulations and check the moisture sensitivity level before assembly. Validate that the part status aligns with current production requirements.
Select the RN4907,LF when a complementary pair of pre-biased transistors with specific resistance ratios is required. The 10kΩ base resistor and 47kΩ emitter-base resistor configuration suits standard logic interface needs. Consider the 200MHz transition frequency for high-speed digital applications. Verify that the 50V voltage rating and 100mA current capacity meet the load requirements.
This component belongs to the RN49xx series of digital transistors from Toshiba. It shares the US6 package form factor with related models like the RN4901 and RN4902 but differs in internal resistor values and current gain specifications. The RN4907 provides a distinct 10kΩ/47kΩ bias ratio compared to other variants in the family.
Public confirmed substitute part numbers are not available in the provided documentation.