RN4907(T5L,F,T)

Overview

The RN4907(T5L,F,T) is a pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single US6 surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical specifications include a DC current gain (hFE) of at least 80 at 10mA and 5V, with a saturation voltage of 300mV max at 250µA base current and 5mA collector current. The transition frequency is rated at 200MHz, and the total power dissipation is limited to 200mW. Internal bias resistors are configured with R1 at 10kΩ and R2 at 47kΩ.

Feature Summary

• Integrates complementary NPN and PNP transistors with built-in bias resistors to simplify circuit design.
• Utilizes a compact US6 (SC-88/SOT-363) surface-mount package for space-constrained applications.
• Features high-speed switching capabilities with a 200MHz transition frequency.

Applications

• Interface circuits requiring level shifting between logic families.
• Driver circuits for low-power loads or relay coils.
• Inverter circuits in digital logic systems.

Procurement Notes

Verify the specific suffix configuration when ordering, as variations such as T5L may indicate specific tape-and-reel packaging or marking standards defined by the manufacturer. Confirm RoHS compliance status and moisture sensitivity level (MSL 1) requirements against your assembly process specifications before finalizing procurement.

Selection Notes

Select this component when a dual pre-biased transistor solution is required in a minimal footprint. Ensure the 100mA current limit and 200mW power dissipation constraints align with the target application's thermal and electrical demands. Compare internal resistor values (10kΩ/47kΩ) against existing designs to verify compatibility with drive voltages.

Part Context

This part belongs to Toshiba’s RN series of pre-biased transistors, which combine BJT arrays with integrated biasing networks. The RN4907 specifically offers a complementary NPN/PNP configuration, distinguishing it from single-type arrays like the RN19xx series. It serves as a discrete alternative to complex driver ICs in simple switching roles.

Replacement Considerations

Direct functional substitutes include the RN4901, though it features different internal resistor ratios (4.7kΩ/4.7kΩ). Designers must verify that the change in bias resistance does not affect the switching speed or drive capability in the specific application context.