RN4909,LF(CT

RN4909,LF(CT

$0.19
  • Description:PNP + NPN BRT Q1BSR22KOHM Q1BER4
  • Series:-

SKU:55e54106bca7 Category: Brand:

  
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Product Detailed Parameters

  • Description:PNP + NPN BRT Q1BSR22KOHM Q1BER4
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200MHz, 250MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

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RN4909,LF(CT

Overview

The RN4909,LF(CT is a pre-biased bipolar transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single surface-mount package. The device features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 100mA. Internal base resistors are specified as 47 kΩ for the NPN section and 22 kΩ for the PNP section. Transition frequencies are rated at 200MHz for the NPN and 250MHz for the PNP transistor. The component dissipates a maximum power of 200mW and utilizes the US6 (SOT-363) package.

Feature Summary

  • Integrates complementary NPN and PNP transistors with built-in bias resistors to simplify circuit design
  • Provides high-speed switching capabilities with transition frequencies up to 250MHz
  • Offers compact surface-mount packaging to maximize board space efficiency

Applications

  • General-purpose logic interface circuits
  • Driver stages for low-power loads
  • Signal level shifting applications

Procurement Notes

Verify that the specific ordering suffix matches the required tape and reel configuration for automated assembly processes. Confirm compliance with RoHS3 standards and ensure the manufacturer designation aligns with Toshiba Semiconductor and Storage. Cross-reference the internal part number against official distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component when a dual transistor solution with integrated biasing is required to reduce external passive components. Ensure the 50V voltage rating and 100mA current capacity meet the operational requirements of the target application. Consider the US6 package dimensions for PCB layout constraints and verify thermal dissipation limits under expected operating conditions.

Part Context

This component belongs to the RN49xx series of pre-biased transistor arrays produced by Toshiba Semiconductor and Storage. These devices are designed to replace discrete transistor networks, offering a simplified alternative for digital switching and amplification tasks. The series provides various resistor combinations and transistor configurations to suit different electronic design needs.

Replacement Considerations

  • RN4905,LF(CT

RN4909,LF(CTRN4909,LF(CT
$0.19
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