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The RN4909,LF(CT is a pre-biased bipolar transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single surface-mount package. The device features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 100mA. Internal base resistors are specified as 47 kΩ for the NPN section and 22 kΩ for the PNP section. Transition frequencies are rated at 200MHz for the NPN and 250MHz for the PNP transistor. The component dissipates a maximum power of 200mW and utilizes the US6 (SOT-363) package.
Verify that the specific ordering suffix matches the required tape and reel configuration for automated assembly processes. Confirm compliance with RoHS3 standards and ensure the manufacturer designation aligns with Toshiba Semiconductor and Storage. Cross-reference the internal part number against official distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Select this component when a dual transistor solution with integrated biasing is required to reduce external passive components. Ensure the 50V voltage rating and 100mA current capacity meet the operational requirements of the target application. Consider the US6 package dimensions for PCB layout constraints and verify thermal dissipation limits under expected operating conditions.
This component belongs to the RN49xx series of pre-biased transistor arrays produced by Toshiba Semiconductor and Storage. These devices are designed to replace discrete transistor networks, offering a simplified alternative for digital switching and amplification tasks. The series provides various resistor combinations and transistor configurations to suit different electronic design needs.