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The RN4909,LXHF(CT is a digital transistor array manufactured by Toshiba Semiconductor and Storage, featuring one NPN and one PNP pre-biased transistor within a US6 surface-mount package. It operates with a maximum collector-emitter voltage of -50V and a continuous collector current of 100mA. The device includes integrated base resistors of 4.7kΩ for both transistors, ensuring a typical resistance ratio of 1. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 10mA and 5V, a maximum saturation voltage of 300mV at specific test conditions, and transition frequencies of 200MHz and 250MHz. Power dissipation is rated at 200mW.
Verify the exact ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and AEC-Q101 certification requirements for your specific application environment before finalizing procurement orders.
Select this component when a matched NPN/PNP pair with identical biasing characteristics is required for push-pull or complementary switching applications. Ensure the 4.7kΩ internal base resistance aligns with the driving source impedance and desired input current levels for the target logic family.
This part belongs to the RN49xx series of digital transistors from Toshiba, designed for high-density mounting and simplified biasing networks. The LXHF(CT) suffix indicates specific packaging and taping configurations suitable for automated surface-mount assembly processes.
Direct substitutes may include other Toshiba parts within the same RN49xx family with matching resistor values, such as RN4901,LXHF(CT, provided the pinout and electrical parameters remain compatible with the existing design constraints.