RN4909(T5L,F,T)

Overview

The RN4909(T5L,F,T) is a pre-biased bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within an Extreme-Super-Mini US6 package (6-TSSOP, SC-88, SOT-363). The device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. Internal biasing resistors are configured at 2.2 kΩ for the NPN base and 47 kΩ for the PNP base. The component supports surface mount installation with a maximum power dissipation of 200mW. Transition frequencies are rated at 250MHz for the NPN and 200MHz for the PNP element.

Feature Summary

• Integrates dual NPN and PNP transistors with built-in biasing resistors in a single compact package
• Provides simplified circuit design by eliminating external bias components
• Supports high-speed switching applications through specified transition frequency ratings

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct internal resistor values and package configuration. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into the production line. Cross-reference the part number with authorized distributors to validate authenticity and supply chain integrity.

Selection Notes

Select this component when space constraints require a dual transistor solution with integrated biasing. Ensure the required collector current does not exceed 100mA and the operating voltage remains within the 50V limit. Verify that the US6 package dimensions fit the designated PCB footprint and thermal management requirements.

Part Context

This part belongs to Toshiba's series of Bias Resistor Built-in Transistors (BRT). These devices combine bipolar transistors with on-chip resistors to reduce board space and assembly costs. The RN4909 specifically pairs a 2.2kΩ base resistor with an NPN and a 47kΩ base resistor with a PNP, offering distinct drive characteristics for complementary switching tasks.

Replacement Considerations

RN4985,LXHF(CT is documented as a parameter-equivalent substitute.