RN4910,LF

Overview

The RN4910,LF is a dual digital transistor from Toshiba Semiconductor and Storage, integrating one NPN and one PNP epitaxial-type silicon transistor with built-in bias resistors in a US6 package. The device features a common input resistor (R1) of 4.7 kΩ for both transistors. Absolute maximum ratings include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a total power dissipation (PC) of 200 mW at 25°C ambient temperature. Electrical characteristics specify a minimum DC current gain (hFE) of 120 at IC = 1 mA, with transition frequencies reaching 200 MHz for the NPN unit and 250 MHz for the PNP unit.

Feature Summary

• Integrates complementary NPN and PNP transistors within a single ultra-small surface-mount package to reduce component count.
• Includes built-in bias resistors to simplify circuit design and minimize manufacturing processes.
• Utilizes a US6 (ultra super mini type) footprint for high-density board layouts.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to ensure correct packaging configuration. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure that the selected variant matches the required automotive or industrial qualification standards if applicable to the target application environment.

Selection Notes

Select this component when space constraints require a compact dual-transistor solution with integrated biasing. Evaluate the 50 V collector-emitter voltage rating against the maximum operating voltage of the circuit. Consider the 200 mW total power dissipation limit and derating requirements based on the expected ambient temperature conditions during operation.

Part Context

The RN4910 belongs to Toshiba's series of digital transistors designed for general-purpose switching applications. It utilizes a Silicon PNP/NPN Epitaxial Type structure with a PCT Process. This family of components is engineered to replace discrete transistor and resistor combinations, offering a standardized alternative for logic interface and signal inversion tasks in consumer and industrial electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing should be performed using equivalent electrical parameters such as VCEO, IC, hFE, and package type through official distributor databases.