RN4910(T5L,F,T)

Overview

The RN4910(T5L,F,T) is a pre-biased digital transistor array from Toshiba Semiconductor and Storage, integrating one NPN and one PNP bipolar junction transistor within a US6 surface-mount package. It features built-in bias resistors with a typical value of 4.7 kOhms for both transistors. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA per transistor. Total power dissipation is rated at 200 mW. Electrical characteristics include a minimum DC current gain (hFE) of 120, transition frequencies up to 250 MHz, and low saturation voltages.

Feature Summary

• Integrates complementary NPN and PNP transistors into a single ultra-miniature component
• Includes built-in bias resistors to simplify circuit design and reduce part count
• Optimized for high-speed switching applications with transition frequencies reaching 250 MHz

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm exact packaging configuration and compliance status. Ensure that the selected variant matches the required reel or cut tape specifications for automated assembly processes. Cross-reference the manufacturer's latest datasheet to validate environmental certifications such as RoHS before finalizing procurement orders.

Selection Notes

Select this component when space constraints require a dual-transistor solution in a compact US6 footprint. The integrated bias resistors eliminate external components, reducing board area and manufacturing complexity. Verify that the 50 V breakdown voltage and 100 mA current ratings align with the target application's electrical requirements and thermal management capabilities.

Part Context

This component belongs to the RN4910 series of pre-biased digital transistors manufactured by Toshiba Semiconductor and Storage. The series utilizes silicon epitaxial planar technology designed for efficient signal processing and logic interfacing. The US6 package represents an ultra-super mini form factor intended for high-density surface-mount electronics.

Replacement Considerations

Consult official Toshiba resources for verified substitute part numbers. Do not assume functional equivalence with other manufacturers' digital transistor arrays without comprehensive parameter comparison.