RN4911FE,LXHF(CT

Overview

The RN4911FE,LXHF(CT is a dual pre-biased BJT array manufactured by Toshiba Semiconductor and Storage, integrating one NPN and one PNP transistor in a US6 surface-mount package. It features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device includes internal base resistors of 4.7kΩ for both transistors, ensuring a minimum DC current gain (hFE) of 30 at 10mA and 5V. With a transition frequency of 200MHz/250MHz and a power dissipation rating of 200mW, it is designed for high-speed switching applications. This component holds AEC-Q101 automotive qualification.

Feature Summary

• Integrated dual configuration combining one NPN and one PNP pre-biased transistor in a single compact package.
• Automotive-grade reliability certified under the AEC-Q101 standard for harsh environment operation.
• Internal base resistors simplify circuit design by reducing external component count and board space.
• High-frequency performance suitable for RF and high-speed digital switching applications.

Applications

• Automotive electronic control units requiring qualified discrete semiconductor components.
• High-speed digital logic interface circuits and level shifting applications.
• RF amplifier stages and mixer circuits utilizing pre-biased transistor arrays.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and automotive qualification status. Ensure compatibility with RoHS directives if required by the target application. Cross-reference the DigiKey part number with the manufacturer's latest datasheet to confirm availability and lead times before finalizing procurement plans.

Selection Notes

Select this component when a dual NPN/PNP pre-biased configuration is required within a limited PCB area. The 50V rating and 100mA current capacity suit low-to-medium power switching tasks. Verify that the internal 4.7kΩ base resistors align with the driving source impedance and desired switching speed requirements for the specific circuit design.

Part Context

This part belongs to the RN49xx series of pre-biased bipolar junction transistor arrays from Toshiba. These devices are engineered to replace multiple discrete components, offering a simplified solution for digital switching and amplification. The FE suffix typically denotes a specific tape and reel packaging format intended for automated assembly processes.

Replacement Considerations

Publicly confirmed substitute part numbers for this specific model were not identified in the provided reference data. Engineers should consult Toshiba's official replacement guide or equivalent automotive-qualified dual pre-biased BJT arrays with matching electrical parameters and pin configurations.