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The RN4911,LF(CT is a dual pre-biased bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one PNP and one NPN transistor within a single surface-mount package. The device features built-in bias resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage of 50V for both transistors and a maximum DC collector current of 100mA. The transition frequency is rated at 200MHz for the PNP section and 250MHz for the NPN section. Maximum power dissipation is 100mW. The unit utilizes a US6 (SOT-363) package configuration.
Verify the specific suffix designation against official Toshiba documentation to confirm exact packaging and compliance status. Ensure the requested variant matches the required lead-free and RoHS specifications. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm availability and authenticity before procurement.
Select this component when a dual transistor solution with integrated biasing is required for space-constrained designs. Consider the 50V voltage rating and 100mA current limit relative to load requirements. Evaluate the US6 package dimensions against PCB footprint constraints. Compare transition frequencies against signal speed requirements for both PNP and NPN sections.
This part belongs to Toshiba's series of Bias Resistor Built-in Transistors (BRT). These devices combine bipolar transistors with internal resistors to replace discrete resistor-transistor combinations. The RN4911 specifically offers a complementary PNP/NPN pair, providing flexibility for push-pull or differential interface applications while maintaining a small form factor.
Public confirmed substitute part numbers are not available in the provided source material.