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The RN4911,LXHF(CT is a pre-biased bipolar transistor array from Toshiba Semiconductor and Storage, featuring one NPN and one PNP transistor in a dual configuration. It operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device supports high-frequency applications up to 200MHz for the NPN and 250MHz for the PNP element. Power dissipation is rated at 100mW, with a maximum operating temperature of +150°C. Packaged in the US6 surface-mount format, it meets AEC-Q101 automotive standards.
Verify the specific suffix LXHF against the official Toshiba datasheet to confirm packaging details and tape-and-reel specifications. Ensure that the AEC-Q101 automotive grade designation aligns with your project's reliability requirements. Cross-reference the US6 package dimensions with your PCB footprint library to guarantee mechanical compatibility during assembly.
Select this component when a dual polarity switching solution is required within strict spatial constraints. The integrated bias network eliminates the need for external base resistors, simplifying schematic design. Consider the 50V voltage rating and 100mA current limit to ensure adequate headroom for the intended load conditions.
This part belongs to Toshiba's RN series of pre-biased transistors, designed to replace discrete resistor-transistor combinations. The RN4911 variant specifically pairs NPN and PNP elements, offering versatility for push-pull or differential signaling applications compared to single-type arrays.
Consult official Toshiba documentation for direct cross-reference candidates. Verify pinout compatibility and electrical parameter equivalence before substituting with alternative manufacturers' dual BRT devices.