RN4911(T5L,F,T)

Overview

The RN4911(T5L,F,T) is a pre-biased dual bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single surface-mount package, specifically the US6 form factor (equivalent to SC-88 or SOT-363). The device features an integrated base resistor network designed to simplify circuit design by eliminating external biasing components. Key electrical specifications include a collector-emitter breakdown voltage of 50V for both transistors and a maximum continuous collector current of 100mA. The component supports high-frequency operations with transition frequencies rated at 200MHz for the NPN element and 250MHz for the PNP element, while maintaining a maximum power dissipation of 200mW.

Feature Summary

• Integrates complementary NPN and PNP pre-biased transistors in a compact dual configuration
• Includes internal base resistors to reduce external component count and simplify driver circuits
• Designed for high-speed switching applications with specified transition frequencies up to 250MHz
• Utilizes a small surface-mount package suitable for automated assembly processes

Applications

• General-purpose switching circuits requiring complementary logic inversion
• Driver stages for low-power digital interfaces
• Logic level shifting between different voltage domains
• Small-signal amplification in audio or RF front-end stages

Procurement Notes

Verify the specific suffix codes against official Toshiba documentation to confirm exact resistance values and packaging variations. Confirm availability status as distribution data may reflect obsolete or end-of-life statuses. Ensure compatibility with RoHS directives if required by the target application. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.

Selection Notes

Select this component when a compact solution for complementary switching is required without external biasing resistors. Compare the 50V rating and 100mA current limits against circuit requirements to ensure adequate headroom. Evaluate the US6 package dimensions against PCB space constraints. Consider the transition frequency specifications to verify suitability for the intended signal bandwidth and switching speeds.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which are engineered to replace discrete resistor-transistor combinations. The RN4911 specifically pairs NPN and PNP elements, offering a symmetrical alternative to single-type arrays like the RN4901. These devices are commonly used in consumer electronics and industrial control boards where board space is limited and manufacturing efficiency is prioritized.

Replacement Considerations

Direct substitutes may include other dual pre-biased BJT arrays from manufacturers such as ON Semiconductor or Diodes Inc. Verify pinout compatibility and electrical parameter equivalence, particularly Vceo and hFE, before substitution. Check for package dimension matches to ensure physical interchangeability on existing footprints.