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Product Detailed Parameters
- Description：TRANS NPN/PNP PREBIAS 0.1W ES6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：4.7kOhms
- Resistor - Emitter Base (R2)：4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250MHz, 200MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
Download product information
Overview
The RN4981FE,LF(CT is a dual pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP bipolar junction transistor within a single SOT-563 (ES6) surface-mount package. The device features built-in bias resistors to simplify circuit design and reduce component count. Key electrical specifications include a collector-emitter breakdown voltage of 50V for both transistors and a continuous collector current rating of 100mA. The typical DC current gain (hFE) is specified at a minimum of 30. Power dissipation is rated at 100mW, with a transition frequency of 250MHz for the NPN element and 200MHz for the PNP element.
Feature Summary
- Integrates complementary NPN and PNP transistors with built-in bias resistors in a compact SMD package
- Simplifies circuit design by reducing the total number of external components required
- Provides high-speed switching capabilities suitable for digital interface applications
Applications
- Digital logic level shifting and inversion circuits
- Interface circuits between microcontrollers and peripheral devices
- Driver circuits for low-power loads requiring complementary switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the ES6 package variant matches the footprint requirements of the target PCB layout. Cross-reference the RoHS compliance status with current environmental regulations applicable to the region of deployment.
Selection Notes
Select this component when a complementary NPN/PNP pair with integrated base resistors is required for space-constrained designs. Ensure the 50V voltage rating and 100mA current limit align with the operational parameters of the load. Consider the 100mW power dissipation limit and thermal management needs if operating near maximum ratings.
Part Context
This part belongs to the RN4981 series of pre-biased transistor arrays from Toshiba. It is functionally similar to other models in the family but distinguished by its specific resistor values and packaging configuration. The ES6 package denotes a small outline transistor format designed for automated surface-mount assembly processes.
Replacement Considerations
RN4981FE(T5L,F,T)
FAQ
What are the built-in bias resistor values for the RN4981FE?
The typical bias resistor values are 4.7 kΩ for both the base resistor (R1) and the emitter/base resistor (R2).
Is the RN4981FE available in a through-hole package?
No, the RN4981FE is exclusively available in the SOT-563 (ES6) surface-mount package.
What is the maximum power dissipation for this device?
The maximum power dissipation is rated at 100mW at an ambient temperature of 25°C.
