RN4981FE,LXHF(CT

Overview

The RN4981FE,LXHF(CT is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within an ES6 surface-mount package, featuring built-in bias resistors to simplify circuit design. The device supports a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V. Key electrical parameters include a DC current gain (hFE) of at least 30 at 10mA with 5V applied, and a saturation voltage of no more than 300mV under specific drive conditions. The unit operates with a maximum power dissipation of 100mW and exhibits a transition frequency of 250MHz.

Feature Summary

• Integrates one NPN and one PNP transistor with built-in bias resistors in a single compact package
• Designed for high-speed switching applications with a transition frequency of 250MHz
• Reduces component count and manufacturing complexity through integrated biasing

Applications

• Switching circuits requiring complementary NPN/PNP configurations
• Inverter and interface driver circuits
• Logic level translation interfaces

Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation to ensure correct packaging and variant selection. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Cross-reference the DigiKey part number RN4981FELXHFCTND or equivalent distributor identifiers with the original equipment manufacturer's datasheet to validate authenticity and specifications.

Selection Notes

Select this component when a compact solution for complementary switching is required without external biasing resistors. Ensure the application voltage does not exceed the 50V collector-emitter rating and that the total power dissipation remains within the 100mW limit. Verify that the ES6 package dimensions fit the available PCB footprint constraints.

Part Context

This component belongs to the RN49xx series of pre-biased transistors from Toshiba Semiconductor and Storage. These devices are engineered to replace discrete resistor-transistor networks, offering space savings and improved reliability in digital logic and signal processing applications. The ES6 package provides a small form factor suitable for dense surface-mount assemblies.

Replacement Considerations

RN4981FE,LF(CT

FAQ

What is the typical resistance value of the built-in bias resistors?

The built-in bias resistors typically have a value of 4.7 kΩ.

Is this component RoHS compliant?

Yes, the RN4981FE,LXHF(CT is compliant with RoHS3 standards.