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The RN4982FE,LF(CT is a dual bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP epitaxial planar silicon transistor within an ES6 surface-mount package. The device features internal base resistors of 10 kΩ for both the NPN and PNP elements. Key electrical specifications include a maximum collector-emitter breakdown voltage of 50V, a continuous collector current of 100mA, and a transition frequency of 250MHz. The unit offers a DC current gain (hFE) of at least 50 at 10mA/5V and a saturated collector-emitter voltage of 300mV max at 250µA/5mA. Power dissipation is rated at 100mW.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested variant matches the required resistance values and package type. Cross-reference the part number with authorized distributors to validate authenticity and traceability before finalizing procurement orders.
Select this component when a compact solution requires both NPN and PNP switching capabilities with integrated biasing. Ensure the design operates within the 100mW power dissipation limit and 50V voltage rating. Verify that the 10kΩ internal resistors align with the target drive current requirements for the specific application interface.
This part belongs to the RN4982 series of bias resistor built-in transistors from Toshiba. It is designed as a space-saving alternative to discrete transistor and resistor combinations. The ES6 package provides a small footprint suitable for dense printed circuit board layouts in consumer and industrial electronics.
Check for direct substitutes such as the RN4981FE or RN4986FE if different resistor ratios are acceptable. Verify pin compatibility and electrical parameters against alternatives like the Rohm UMD3NFHATR to ensure functional equivalence in the existing circuit design.