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The RN4982FE,LXHF(CT is a bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP bipolar junction transistor in a single surface-mount package with point-symmetrical internal connections. The device features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Internal base resistors are specified at 2.2 kΩ for the NPN side and 47 kΩ for the PNP side. The component operates with a transition frequency up to 250MHz and supports a maximum power dissipation of 200mW. It is housed in a US6 (SOT-363) package and meets AEC-Q101 automotive qualification standards.
Verify the specific suffix LXHF against official Toshiba documentation to confirm packaging type and compliance status. Ensure the ordering part number matches the required resistance values and package variant. Cross-reference the manufacturer product code with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Select this component when a dual BJT configuration with asymmetric biasing is required in a minimal footprint. The 2.2kΩ and 47kΩ resistor values suit specific drive strength requirements for NPN and PNP channels respectively. Consider the 200mW power dissipation limit and SOT-363 thermal characteristics during PCB layout planning for high-density designs.
This part belongs to the RN49xx series of bias resistor built-in transistors from Toshiba. These devices are designed to replace discrete transistor-resistor networks, saving board space and assembly costs. The RN4982 variant specifically offers distinct resistance ratios for its NPN and PNP elements, differentiating it from symmetric counterparts like the RN4981 or RN4983 within the same family.
RN4985,LXHF(CT is listed as a parameter-equivalent alternative in available distributor data.