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The RN4982,LF(CT is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single surface-mount package. The device features built-in bias resistors of 10 kΩ for both the base (R1) and emitter-base (R2) terminals. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (Ic) of 100 mA, and a transition frequency (fT) of 250 MHz. The unit offers a minimum DC current gain (hFE) of 50 at 10 mA and 5 V, with a maximum power dissipation of 100 mW.
Verify the specific suffix configuration against the manufacturer's official datasheet to ensure compatibility with the required packaging format, such as cut tape or reel. Confirm that the component meets RoHS3 compliance standards if environmental regulations apply to the target assembly. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component when a compact solution for dual-channel switching or inversion is required. Ensure the application voltage does not exceed the 50 V collector-emitter rating. Verify that the 100 mA current limit and 100 mW power dissipation are sufficient for the load requirements. Consider the ES6 package dimensions for PCB layout constraints compared to alternative packages like US6.
This part belongs to the RN4982 series of digital transistors from Toshiba. It is functionally similar to other pre-biased arrays but distinguished by its specific resistor values and package type. The LF suffix indicates lead-free composition, aligning with modern environmental manufacturing standards. It serves as a direct replacement for discrete resistor-transistor networks in space-constrained designs.
The UMD3NFHATR from Rohm Semiconductor is a documented alternative offering similar NPN/PNP configuration and 50V rating. Verify pinout compatibility and exact resistance values when substituting.