RN4983FE,LF(CT

RN4983FE,LF(CT

$0.19
  • Description:TRANS NPN/PNP PREBIAS 0.1W ES6
  • Series:-

SKU:51bf613fabd4 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS 0.1W ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

Download product information

RN4983FE,LF(CT

Overview

The RN4983FE,LF(CT is a pre-biased digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP bipolar junction transistor within a single ES6 surface-mount package. The device features built-in bias resistors to simplify circuit design and reduce component count. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per transistor. The unit offers a transition frequency of 250MHz and a maximum power dissipation of 100mW. Each transistor includes a 10 kΩ base resistor (R1) and a 10 kΩ emitter resistor (R2).

Feature Summary

  • Integrates dual NPN and PNP transistors with built-in bias resistors in a compact ES6 package.
  • Simplifies circuit design by reducing the quantity of external components and manufacturing processes.
  • Provides high-speed switching capabilities suitable for interface and driver applications.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the complete part number including the ordering suffix against official Toshiba Semiconductor and Storage documentation to ensure correct packaging and compliance status. Confirm that the ES6 package type matches the target PCB footprint requirements. Check for RoHS3 compliance and AEC-Q101 qualification if automotive standards are required for the specific application environment.

Selection Notes

Select this component when a compact solution for simultaneous NPN and PNP switching is required. The integrated 10kΩ bias resistors eliminate the need for external base drive components, saving board space. Ensure the 50V voltage rating and 100mA current capacity meet the load requirements. Compare against similar RN49xx series parts if different resistance values or package types are needed.

Part Context

This component belongs to the Toshiba RN49xx series of pre-biased digital transistors. These devices are designed to replace multiple discrete components, facilitating miniaturization in portable electronics. The ES6 package is an Extreme-Super-Mini form factor, offering high density compared to standard SOT packages. It shares functional similarities with other dual-transistor arrays in the same product line.

Replacement Considerations

Publicly confirmed substitute part numbers for RN4983FE,LF(CT were not identified in the provided source material. Verify compatibility with alternative dual pre-biased transistors by matching Vceo, Ic, package dimensions, and internal resistor values before substitution.

RN4983FE,LF(CTRN4983FE,LF(CT
$0.19
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