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The RN4983,LF(CT is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within an ES6 surface-mount package, equivalent to SOT-563 or SOT-666. The device features built-in bias resistors of 10 kΩ for both the base (R1) and emitter (R2). Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 50V, a continuous collector current (Ic) of 100mA, and a transition frequency (fT) of 250MHz. The maximum power dissipation is rated at 100mW, with a minimum DC current gain (hFE) of 50 at 10mA and 5V.
Verify the specific suffix configuration against the official Toshiba datasheet to ensure compatibility with the required resistor values and package type. Confirm RoHS compliance status and AEC-Q101 qualification requirements if the application demands automotive-grade reliability standards before finalizing procurement.
Select this component when a compact solution for simultaneous NPN and PNP switching is required. Ensure the 10kΩ internal bias resistance aligns with the driving logic levels. Verify that the 100mA collector current and 50V voltage ratings exceed the maximum operational loads in the target circuit design.
This part belongs to the Toshiba RN49xx series of digital transistors, which are designed to replace discrete BJT and resistor combinations. The RN4983 specifically provides a complementary pair in a small footprint, serving as a direct replacement for older dual-transistor assemblies in space-constrained consumer and industrial electronics.
Check for pin-compatible alternatives such as the RN4982 or RN4986 from Toshiba, ensuring resistor ratios match the original design requirements. Cross-reference with other manufacturers' dual pre-biased arrays in the ES6/SOT-563 package, verifying hFE and Vce(sat) parameters for functional equivalence.