RN4984FE,LF(CT

Overview

The RN4984FE,LF(CT is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within an ES6 surface-mount package. The device features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per transistor. Internal base resistors are typically 10 kΩ for both the NPN and PNP sections. Key electrical characteristics include a DC current gain (hFE) minimum of 50 at 10mA and 5V, and a transition frequency of 250MHz. The maximum power dissipation is rated at 100mW, with a saturation voltage of 300mV maximum at specific test conditions.

Feature Summary

• Integrated dual configuration combining one NPN and one PNP transistor in a single compact package to reduce component count.
• Pre-biased design incorporates internal base resistors to simplify driver circuit requirements and improve switching speed.
• High-frequency performance supported by a 250MHz transition frequency suitable for signal processing applications.

Applications

• Digital logic level shifting and interface circuits between microcontrollers and peripheral devices.
• Switching applications in portable equipment and battery-powered devices requiring low power consumption.
• General-purpose amplification and switching in consumer electronics and industrial control systems.

Procurement Notes

Verify the complete part number including the suffix LF(CT) to ensure correct RoHS compliance and tape-and-reel packaging specifications. Confirm that the ES6 package footprint matches the target PCB layout. Check for any recent product change notifications or lifecycle status updates from Toshiba Semiconductor and Storage prior to finalizing procurement plans.

Selection Notes

Select this component when a complementary NPN/PNP pair with integrated biasing is required in a minimal footprint. Ensure the 50V voltage rating and 100mA current limit meet the circuit demands. Compare the 10kΩ internal resistance values against external resistor alternatives if precise biasing adjustments are needed. Verify thermal management capabilities given the 100mW power dissipation limit in the small outline package.

Part Context

This part belongs to the RN49xx series of digital transistors from Toshiba, designed for high-density mounting. The RN4984 variant specifically pairs NPN and PNP structures, differing from single-type arrays like the RN19xx or RN2xxx series. The ES6 package offers a compact solution compared to larger through-hole or standard SOT packages, supporting modern miniaturization trends in electronic assemblies.

Replacement Considerations

Potential substitutes include the RN4982FE,LF(CT or UMD3NFHATR, though pinout and internal resistor values must be verified. Cross-reference datasheets for hFE, Vce(sat), and package dimensions to ensure mechanical and electrical compatibility without redesigning the surrounding circuitry.