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The RN4984,LF(CT is a dual bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP bipolar junction transistor in a point-symmetrical configuration within an SOT-363 (US6) surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA. Internal base resistors are typically configured at 10kΩ for both transistors. Key electrical parameters include a DC current gain (hFE) minimum of 50 at 10mA and 5V, with a transition frequency of 250MHz. Power dissipation is rated at 100mW.
Verify the specific suffix and tape-and-reel quantity against the manufacturer's latest datasheet before ordering. Confirm that the ES6 or US6 package designation matches the target footprint requirements. Ensure compliance with RoHS directives if required by the end application. Check for automotive qualification status if the component is intended for AEC-Q101 compliant systems.
Select this component when a matched NPN/PNP pair with integrated biasing is required for space-constrained designs. The point-symmetrical topology offers flexibility in circuit arrangement compared to non-symmetrical alternatives. Verify that the 100mA current rating and 50V voltage limits exceed the maximum operating conditions of the target application.
This part belongs to the RN49xx series of digital transistors from Toshiba. It shares the same physical package and general electrical characteristics as the RN4982 but differs in internal resistor values. The RN4984 specifically utilizes 10kΩ base resistors for both the NPN and PNP elements, distinguishing it from variants with different resistance ratios.
The RN4982,LF(CT is a documented alternative within the same product family. Both components share the SOT-363 package and similar electrical ratings. Verify that the resistor values of the substitute match the original circuit requirements before implementation.