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Product Detailed Parameters
- Description：NPN + PNP BRT Q1BSR2.2KOHM Q1BER
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：2.2kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250MHz, 200MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
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Overview
The RN4985FE,LF(CT) is a dual bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor in a point-symmetrical 2-in-1 configuration within an ES6 package. The device features a typical base resistor (R1) of 2.2 kOhms and an emitter resistor (R2) of 47 kOhms. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 200 mW. It meets AEC-Q101 automotive qualification standards.
Feature Summary
- Integrates NPN and PNP transistors with internal bias resistors to reduce component count
- Point-symmetrical internal connection simplifies circuit design
- Automotive qualified under AEC-Q101 standards for reliability
Applications
- Automotive interface circuits
- Inverter circuits
- Driver circuits
Procurement Notes
Verify the specific suffix LF(CT) against official Toshiba documentation to confirm packaging type and lead-free compliance. Ensure the part number matches the exact resistance values and package dimensions required for the target PCB footprint before ordering.
Selection Notes
Select this component when a compact solution requires both NPN and PNP switching capabilities with integrated biasing. The point-symmetrical layout allows for flexible orientation in designs where space is constrained. Confirm that the 50V rating and 100mA current capacity meet the load requirements.
Part Context
This part belongs to the RN49xx series of digital transistors from Toshiba. It shares the ES6 package form factor with similar models like the RN4986FE but differs in internal resistor values and specific pinout configurations. It is designed as a drop-in replacement for discrete resistor-transistor networks in space-sensitive applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs by comparing absolute maximum ratings and pin assignments with alternative BRTs.
