SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN4985FE,LXHF(CT) is a dual bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor in a point-symmetrical 2-in-1 configuration within an SMD US6 package. The device features a typical base resistor (R1) of 2.2 kOhms and an emitter resistor (R2) of 47 kOhms. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 200 mW. It is qualified under AEC-Q101 for automotive applications and supports operating temperatures up to +150°C.
Verify the specific suffix LXHF against the manufacturer's official documentation to confirm packaging details and compliance status. Ensure the part number matches the required resistance values and polarity configuration for your design. Cross-reference with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a compact solution for both NPN and PNP switching is required. The point-symmetrical layout allows for mirrored circuit designs. Verify that the 2.2 kOhm base resistance meets the drive requirements of your control signal source. Ensure the 50V voltage rating exceeds the maximum circuit voltage.
This part belongs to the RN49xx series of bias resistor built-in transistors from Toshiba. These devices are designed to replace discrete transistor-resistor combinations, saving board space. The FE suffix typically denotes specific packaging or tape-and-reel specifications within the product line.
RN4985,LXHF(CT) is a parameter-equivalent alternative. Check if the LF suffix variant offers identical electrical characteristics for direct substitution.