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The RN4985,LF(CT is a dual digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP pre-biased transistor within a single US6 (SOT-363) surface-mount package. The device features an internal base resistor of 2.2 kOhms and an emitter resistor of 47 kOhms. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 200 mW. The component meets AEC-Q101 automotive qualification standards and supports operating temperatures up to +150°C.
Verify the specific suffix LF(CT against official Toshiba documentation to confirm packaging format and compliance status. Ensure that the US6 package dimensions align with the target PCB footprint. Confirm AEC-Q101 certification requirements are met for the intended application environment before finalizing procurement decisions.
Select this component when a symmetrical NPN/PNP pair with fixed 2.2k/47k biasing is required. The US6 package offers space efficiency compared to discrete solutions. Consider the 50V voltage rating and 100mA current limit to ensure operation remains within safe thermal and electrical boundaries during design integration.
This part belongs to the RN49xx series of digital transistors from Toshiba. It serves as a functional equivalent to other dual pre-biased arrays like the RN4905,LF(CT, sharing similar electrical characteristics but potentially differing in specific manufacturing revisions or packaging details defined by the manufacturer's product codes.
RN4905,LF(CT is documented as a parameter-equivalent alternative.