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The RN4986FE,LF(CT is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within an ES6 surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical specifications include a minimum DC current gain (hFE) of 80 at 10mA and 5V, with a maximum Vce saturation voltage of 300mV at 250µA base current and 5mA collector current. Transition frequencies are rated at 250MHz for the NPN and 200MHz for the PNP element. Power dissipation is limited to 100mW, and internal biasing resistors consist of R1 at 4.7kΩ and R2 at 47kΩ.
Verify the specific ordering suffix against official Toshiba documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with RoHS3 standards if required by the target assembly process. Confirm availability status as manufacturing lifecycles may change without prior notice.
Select this component when a complementary NPN/PNP pair with integrated biasing is required in a small footprint. Compare hFE requirements and resistor values against alternative models like the RN4981 or RN4987 to ensure electrical parameters match the specific application needs.
This part belongs to the RN4986 series of digital transistors from Toshiba. It is designed for space-constrained applications where multiple discrete components would otherwise be needed. The ES6 package offers a compact solution compared to larger through-hole alternatives.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Toshiba documentation for direct pin-compatible alternatives within the same product family.