RN4986FE,LF(CT

RN4986FE,LF(CT

$0.19
  • Description:TRANS NPN/PNP PREBIAS 0.1W ES6
  • Series:-

SKU:f61c9bffb695 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS 0.1W ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz, 200MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

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RN4986FE,LF(CT

Overview

The RN4986FE,LF(CT is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within an ES6 surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical specifications include a minimum DC current gain (hFE) of 80 at 10mA and 5V, with a maximum Vce saturation voltage of 300mV at 250µA base current and 5mA collector current. Transition frequencies are rated at 250MHz for the NPN and 200MHz for the PNP element. Power dissipation is limited to 100mW, and internal biasing resistors consist of R1 at 4.7kΩ and R2 at 47kΩ.

Feature Summary

  • Integrates complementary NPN and PNP transistors into a single compact surface-mount component.
  • Includes built-in biasing resistors to simplify circuit design and reduce external component count.
  • Provides high-speed switching capabilities with transition frequencies up to 250MHz.
  • Features low saturation voltage characteristics for efficient power handling.

Applications

  • Digital logic interface circuits requiring level shifting or buffering.
  • Switching applications in portable electronic devices.
  • General-purpose signal processing stages in consumer electronics.

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with RoHS3 standards if required by the target assembly process. Confirm availability status as manufacturing lifecycles may change without prior notice.

Selection Notes

Select this component when a complementary NPN/PNP pair with integrated biasing is required in a small footprint. Compare hFE requirements and resistor values against alternative models like the RN4981 or RN4987 to ensure electrical parameters match the specific application needs.

Part Context

This part belongs to the RN4986 series of digital transistors from Toshiba. It is designed for space-constrained applications where multiple discrete components would otherwise be needed. The ES6 package offers a compact solution compared to larger through-hole alternatives.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Toshiba documentation for direct pin-compatible alternatives within the same product family.

RN4986FE,LF(CTRN4986FE,LF(CT
$0.19
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