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The RN4986FE,LXHF(CT is a dual digital transistor from Toshiba Semiconductor and Storage, featuring an NPN and PNP configuration within a single US-6 surface-mount package. It is designed for automotive applications with AEC-Q101 qualification. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The device incorporates internal bias resistors with typical values of R1 = 10 kOhms and R2 = 10 kOhms. It offers a minimum DC current gain (hFE) of 50 and supports maximum operating frequencies of 200 MHz for the NPN and 250 MHz for the PNP transistor. Power dissipation is rated at 200 mW, with a maximum operating temperature of +150°C.
Verify the specific suffix FE against official Toshiba documentation to confirm package variant and tape-and-reel specifications. Ensure procurement channels provide valid AEC-Q101 certification records for automotive integration. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before finalizing orders.
Select this component when a complementary NPN/PNP pair is required in a minimal footprint for automotive logic applications. The 10 kOhm input resistor ratio suits standard TTL/CMOS interface levels. Verify that the 50 V rating and 100 mA current capacity meet the specific load requirements of the target circuit design.
This part belongs to the RN49xx series of pre-biased digital transistors manufactured by Toshiba Semiconductor and Storage. The series is characterized by integrated bias resistors and compact SMD packaging, widely used in consumer and automotive electronics for signal switching and level translation tasks.
Consult Toshiba's official cross-reference data for verified substitutes. Generic equivalents may lack AEC-Q101 automotive qualification or identical pinout configurations. Validate thermal and electrical compatibility before substitution.