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The RN4986,LXHF(CT is a dual pre-biased bipolar junction transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within an ES-6 (SOT-563) surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA. Internal biasing resistors are specified as R1=4.7kΩ and R2=47kΩ, yielding a typical resistance ratio of 0.213. Key electrical parameters include a minimum DC current gain (hFE) of 80 at 10mA/5V, a maximum transition frequency of 250MHz for the NPN and 200MHz for the PNP, and a power dissipation capacity of 100mW.
Verify the specific suffix LXHF(CT) against official Toshiba documentation to confirm packaging type and tape-and-reel specifications. Ensure that the ES-6 package dimensions match the target PCB footprint. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement to align with assembly line standards.
Select this component when a compact dual-transistor solution with integrated biasing is required for space-constrained designs. Compare the 4.7kΩ input resistance against alternative models like the RN4987 or RN4986FE if different drive currents are needed. Verify that the 100mA current rating and 50V voltage limits exceed the application's peak operational demands.
This part belongs to the RN49xx series of pre-biased transistors from Toshiba. It shares the same ES-6 package and general electrical characteristics as the RN4986FE,LF(CT but may differ in specific manufacturing lot codes or regional distribution suffixes. It serves as a direct replacement for discrete resistor-transistor networks in similar form factors.
The RN4986FE,LF(CT is a confirmed equivalent part number offering identical electrical specifications and package type. Verify pinout symmetry and resistor values before substitution.