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The RN4986(T5L,F,T) is a pre-biased dual bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single surface-mount package, specifically the ES6 form factor which corresponds to SOT-563 or SOT-666 configurations. The device features a collector-emitter breakdown voltage of 50V for both transistors and supports a continuous collector current of 100mA. Internal base resistors are typically set at 4.7 kΩ for the NPN and 47 kΩ for the PNP. Key electrical characteristics include a DC current gain (hFE) of 80 at 10mA/5V, a transition frequency of 250MHz for the NPN and 200MHz for the PNP, and a maximum power dissipation of 100mW.
Verify the specific suffix against official Toshiba documentation to confirm resistor values and package type. Ensure compatibility with RoHS3 standards if required by the target application. Confirm availability through authorized distributors as lead times may vary based on production schedules.
Select this component when a matched NPN/PNP pair with integrated biasing is required. Consider the 100mW power dissipation limit and 50V voltage rating during thermal and electrical design. Verify that the ES6 package dimensions fit the PCB layout constraints compared to standard discrete transistor footprints.
This part belongs to Toshiba's RN49xx series of digital transistors, designed to replace multiple discrete components. The RN4986 variant specifically pairs an NPN with a PNP, offering a solution for push-pull configurations or differential signaling interfaces where space savings and consistent biasing are critical.
Check for direct equivalents such as the RN4986FE,LF(CT) which shares identical electrical specifications and pinout. Verify that any substitute maintains the same ES6/SOT-563 package and internal resistor ratios to ensure circuit compatibility.