RN4987FE,LF(CT

RN4987FE,LF(CT

$0.19
  • Description:TRANS NPN/PNP PREBIAS 0.1W ES6
  • Series:-

SKU:20ea140af36b Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS 0.1W ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz, 200MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

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RN4987FE,LF(CT

Overview

The RN4987FE,LF(CT is a dual pre-biased digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP bipolar junction transistor within an ES6 surface-mount package. The device features built-in bias resistors to simplify circuit design. Key electrical specifications include a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. The typical base resistor (R1) is 10 kΩ, while the emitter resistor (R2) is 47 kΩ for the NPN side. The unit offers a DC current gain (hFE) minimum of 80 at 10mA and 5V, with a transition frequency up to 250MHz and power dissipation rated at 100mW.

Feature Summary

  • Integrates symmetrical NPN and PNP transistors with built-in bias resistors in a compact SMD package
  • Designed for high-speed switching applications with a transition frequency reaching 250MHz
  • Reduces component count and assembly costs by combining two transistors and resistors into a single unit

Applications

  • Automotive digital interface circuits requiring AEC-Q101 qualification
  • Inverter and driver circuits for compact electronic equipment
  • General-purpose switching applications in consumer electronics

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and lead times. Confirm RoHS3 compliance status directly with the supplier or authorized distributor prior to purchase. Ensure the ES6 package footprint matches the target PCB layout requirements. Check for any recent lifecycle notices regarding obsolescence or last-time buy dates from Toshiba Semiconductor and Storage.

Selection Notes

Select this component when a point-symmetrical dual transistor configuration is required for space-constrained designs. The 10kΩ base resistor value suits standard logic level driving interfaces. Consider the 50V rating for low-voltage signal switching rather than power handling. Verify thermal management needs as the 100mW power dissipation limit applies to the entire package under specified conditions.

Part Context

This part belongs to the RN498x series of pre-biased transistors from Toshiba. It shares the ES6 package form factor with related models like the RN4982FE but differs in internal resistor values and transistor pairing symmetry. The LF(CT) suffix indicates lead-free composition and cut-tape packaging availability. It serves as a direct replacement for older discrete resistor-transistor networks in modern miniaturized circuits.

Replacement Considerations

The RN4982FE is a documented alternative within the same family, though it lacks the specific 47kΩ emitter resistor configuration found in the RN4987FE. Verify pin compatibility and resistor ratios before substitution. Other generic NPN/PNP dual arrays may require external biasing components, increasing board space.

RN4987FE,LF(CTRN4987FE,LF(CT
$0.19
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