RN4987FE,LXHF(CT

RN4987FE,LXHF(CT

$0.33
  • Description:AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
  • Series:-

SKU:a2887efbe7dc Category: Brand:

  
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Product Detailed Parameters

  • Description:AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz, 200MHz
  • Power - Max:100mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

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RN4987FE,LXHF(CT

Overview

The RN4987FE,LXHF(CT is a dual pre-biased digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP epitaxial transistor within an ES-6 (SOT-563) surface-mount package. The device features point-symmetrical configuration with typical base resistors of 10 kΩ for the NPN side and 47 kΩ for the PNP side. Key electrical parameters include a maximum collector-emitter voltage (Vceo) of 50 V, continuous collector current of 100 mA, and power dissipation of 100 mW. The DC current gain (hFE) is minimum 80 at 10 mA and 5 V, with transition frequencies up to 250 MHz.

Feature Summary

  • Integrates complementary NPN and PNP transistors with built-in bias resistors to reduce component count
  • Point-symmetrical design facilitates simplified PCB layout and routing
  • Automotive-grade qualification ensures reliability in demanding environments

Applications

  • Automotive electronic systems requiring AEC-Q101 compliance
  • Interface circuits for logic level translation
  • Driver circuits for low-power loads

Procurement Notes

Verify the specific suffix LXHF(CT) against official Toshiba documentation to confirm packaging format and lead-free status. Ensure compatibility with RoHS3 directives. Confirm that the ES-6 package matches the target footprint requirements before finalizing procurement orders.

Selection Notes

Select this component when a symmetrical NPN/PNP pair with integrated biasing is required in a compact SOT-563 package. Consider the 100 mW power dissipation limit and 50 V voltage rating during circuit design. Verify that the 10 kΩ and 47 kΩ internal resistor values align with the intended drive currents and logic levels.

Part Context

This part belongs to the RN49xx series of pre-biased transistors from Toshiba. These devices are designed to replace discrete transistor-resistor combinations, simplifying assembly and reducing board space. The RN4987 variant specifically offers a symmetric configuration suitable for push-pull or differential applications.

Replacement Considerations

Check for direct equivalents such as the RN4982FE,LF(CT or RN4986FE,LF(CT if resistor values differ. Verify pinout compatibility and thermal characteristics before substituting.

RN4987FE,LXHF(CTRN4987FE,LXHF(CT
$0.33
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