RN4987,LF(CT

Overview

The RN4987,LF(CT is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within an ES6 surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical specifications include a transition frequency of 250MHz and a maximum power dissipation of 100mW. The integrated base resistor (R1) is typically 10kΩ, while the emitter resistor (R2) is 47kΩ. The component meets RoHS3 standards and carries AEC-Q101 automotive qualification.

Feature Summary

• Integrates symmetrical NPN and PNP digital transistors with built-in biasing resistors to simplify circuit design.
• Features point-symmetrical configuration for flexible mounting orientation in compact layouts.
• Includes internal resistors to reduce external component count and PCB space requirements.
• Automotive-grade qualification ensures reliability for demanding operational environments.

Applications

• Automotive electronic control units requiring robust switching capabilities.
• General-purpose logic level shifting and interface circuits.
• Driver stages for low-power relay or LED actuation.

Procurement Notes

Verify the specific suffix against official Toshiba documentation to confirm exact packaging and qualification status. The provided identifier indicates cut tape packaging; ensure compatibility with automated placement equipment. Confirm RoHS3 compliance and AEC-Q101 certification requirements match the target application standards before finalizing procurement orders.

Selection Notes

Select this component when a compact solution for simultaneous NPN and PNP switching is required. The 10kΩ base resistor suits standard logic interfaces. Verify that the 100mA current rating and 100mW power dissipation meet the thermal and load demands of the specific circuit design compared to higher-power alternatives.

Part Context

This part belongs to the RN49xx series of pre-biased BJT arrays from Toshiba. These devices are designed to replace discrete transistor-resistor networks. The RN4987 variant specifically offers a symmetric NPN/PNP configuration, distinguishing it from single-type arrays like the RN19xx or RN25xx series found in similar product lines.

Replacement Considerations

The UMD3NFHATR from Rohm Semiconductor is a documented alternative offering similar NPN/PNP configurations and 50V ratings in a comparable surface-mount footprint.