RN4988FE,LF(CT

$0.17

Description：NPN + PNP BRT Q1BSR22KOHM Q1BER4
Series：-

SKU:a576555305a2 Category: Bipolar Transistor Arrays, Pre-Biased Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：NPN + PNP BRT Q1BSR22KOHM Q1BER4
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)：100mA
Voltage - Collector Emitter Breakdown (Max)：50V
Resistor - Base (R1)：22kOhms
Resistor - Emitter Base (R2)：47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
pa_vce-saturation-max-ib-ic：
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：250MHz, 200MHz
Power - Max：100mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：ES6

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RN4988FE,LF(CT

Overview

The RN4988FE,LF(CT) is a pre-biased bipolar junction transistor array containing one NPN and one PNP epitaxial type transistor in an ES6 surface-mount package. It operates with a collector-emitter voltage of 50V and a maximum collector current of 100mA per transistor. The device features integrated bias resistors with typical values of 22kΩ (R1) and a resistor ratio (R1/R2) of 0.468. Electrical characteristics include a DC current gain (hFE) minimum of 80 at 10mA/5V, a saturation voltage maximum of 300mV at 5mA/0.25mA, and transition frequencies of 250MHz for the NPN and 200MHz for the PNP. Total power dissipation is rated at 100mW.

Feature Summary

AEC-Q101 qualified for automotive use applications
Integrated bias resistors reduce external component count and assembly time
Compact dual-type small package design

Applications

Switching circuits
Inverter circuits
Interfacing applications
Driver circuits

Procurement Notes

Verify the specific ordering suffix to confirm the intended application scope. The RN4988FE,LF variant is designated for general use, while the LXHF suffix indicates qualification for automotive use under AEC-Q101 standards. Confirm that the selected part number aligns with the required reliability specifications before procurement.

Selection Notes

Select this component when a compact solution for simultaneous NPN and PNP switching or interfacing is required. The built-in bias network simplifies circuit design by eliminating external base resistors. Ensure the total power dissipation limit of 100mW accommodates the thermal requirements of both transistors within the target operating environment.

Part Context

This component belongs to Toshiba's RN498x series of pre-biased bipolar transistor arrays. These devices integrate NPN and PNP transistors with internal biasing networks into single packages. The series offers various configurations optimized for space-constrained digital logic interfaces and signal switching applications.