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The RN4988FE,LXHF(CT is a pre-biased dual bipolar junction transistor array containing one NPN and one PNP epitaxial type silicon transistor in an ES6 (SOT-563) surface-mount package. It features integrated bias resistors with typical values of R1=22 kΩ and R1/R2 ratio=0.468. The device supports a collector-emitter voltage (VCEO) of 50 V, continuous collector current (IC) of 100 mA, and total power dissipation (PC) of 100 mW at 25°C ambient temperature. Electrical characteristics include a minimum DC current gain (hFE) of 80 at IC=10 mA, transition frequencies (fT) of 250 MHz for the NPN section and 200 MHz for the PNP section, and maximum saturation voltages of 0.3 V.
Verify the specific ordering suffix to confirm the intended application scope. The LXHF suffix indicates this variant is designated for unintended use rather than standard automotive deployment. Confirm RoHS compliance status directly with Toshiba Semiconductor and Storage representatives prior to procurement to ensure alignment with project environmental requirements.
Select this component when a compact dual transistor solution with built-in base resistors is required for space-constrained designs. Ensure the 100 mW total power dissipation rating accommodates the thermal constraints of the target PCB layout. Verify that the 50 V collector-emitter breakdown voltage meets the circuit's maximum operating voltage requirements.
This part belongs to the RN4988 series of pre-biased bipolar transistors manufactured by Toshiba Semiconductor and Storage. The series utilizes a PCT process for epitaxial type silicon construction. The LXHF suffix specifically denotes the packaging and qualification tier for non-automotive or general electronic applications within the broader product family.
Consult official Toshiba documentation for verified equivalent part numbers. Cross-referencing requires matching the ES6 package, 50 V/100 mA ratings, and internal resistor configurations.