RN4988,LXHF(CT

Overview

The RN4988,LXHF(CT is a pre-biased dual bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single surface-mount package, specifically the US-6 (SOT-363) configuration. The device features a collector-emitter breakdown voltage (VCEO) of 50 V for both polarities and supports a continuous collector current (IC) of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 80, a maximum operating frequency ranging from 200 MHz to 250 MHz, and a power dissipation (Pd) capacity of 200 mW. The component is designed for high-speed switching applications with a saturation voltage (Vce(sat)) of approximately 300 mV.

Feature Summary

• Integrates complementary NPN and PNP transistors in a compact dual configuration
• Includes built-in bias resistors to simplify circuit design and reduce component count
• Optimized for high-speed switching operations with elevated transition frequencies
• Automotive-grade qualification ensuring reliability under demanding thermal conditions

Applications

• Automotive electronic control units requiring AEC-Q101 qualified components
• High-speed logic level shifting and interface circuits
• General-purpose switching applications in consumer electronics
• Driver stages for low-power loads in embedded systems

Procurement Notes

Verify the specific suffix designation against official Toshiba documentation to confirm exact packaging and automotive compliance status. Ensure that the US-6 package dimensions align with your PCB footprint requirements. Cross-reference the datasheet for thermal derating curves if operating near the maximum temperature limit. Confirm RoHS compliance details through the manufacturer's latest environmental declarations before finalizing procurement specifications.

Selection Notes

Select this component when a matched NPN/PNP pair is required for push-pull or differential configurations. The integrated bias network eliminates external resistor placement, saving board space. Consider the 200 mW power dissipation limit relative to ambient temperature and airflow conditions. Verify that the 50 V rating exceeds the maximum transient voltages present in the target application circuit to ensure long-term reliability.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which are widely used for their compact form factor and integrated resistance networks. The LXHF(CT) suffix typically indicates a specific tape-and-reel packaging format suitable for automated surface-mount assembly processes. It serves as a direct replacement for discrete resistor-transistor combinations in space-constrained designs.

Replacement Considerations

Direct substitutes may include other dual pre-biased transistors in SOT-363 packages with matching 50V/100mA ratings. Verify pinout compatibility and hFE characteristics carefully. Alternative manufacturers such as ON Semiconductor or ROHM offer similar digital transistor arrays, but electrical parameter tolerances must be validated against the original design specifications.