RN4988(T5L,F,T)

Overview

The RN4988(T5L,F,T) is a pre-biased dual bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single surface-mount package, specifically available in TSSOP6, SC88, or SOT363 configurations. The device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. Transition frequencies are rated at 250MHz for the NPN section and 200MHz for the PNP section. Power dissipation is limited to 200mW, with a DC current gain (hFE) of 80 and a Vce saturation voltage of 300mV.

Feature Summary

• Integrates complementary NPN and PNP transistors into a single compact surface-mount unit
• Includes built-in bias resistors to simplify circuit design and reduce component count
• Designed for high-speed switching applications with transition frequencies up to 250MHz

Applications

• Digital logic interface circuits requiring level shifting between different voltage domains
• Driver stages for small-signal relays or LED indicators
• Switching elements in portable battery-powered electronic devices

Procurement Notes

Verify the specific suffix designation when ordering, as variations such as LF indicate lead-free compliance which may affect RoHS status confirmation. Ensure the selected package type matches the PCB footprint requirements, as the part is offered in multiple surface-mount options including SC88 and SOT363. Cross-reference the manufacturer datasheet to confirm active status and availability before finalizing procurement plans.

Selection Notes

Select this component when space constraints require a dual-transistor solution with integrated biasing. The 50V rating suits low-voltage digital systems, while the 100mA current capability supports moderate load driving. Consider the specific transition frequency requirements for each polarity, as the NPN and PNP sections exhibit different speed characteristics. Verify thermal management needs against the 200mW power dissipation limit in the chosen enclosure.

Part Context

This part belongs to Toshiba's RN49xx series of pre-biased BJT arrays, designed to replace discrete resistor-transistor combinations. The RN4988 specifically pairs an NPN and PNP transistor, offering a balanced solution for push-pull or differential signaling applications. It serves as a direct replacement for older discrete designs, improving reliability and reducing assembly time in consumer electronics and industrial control modules.

Replacement Considerations

Consult official Toshiba documentation for verified cross-references. Generic equivalents may differ in hFE ranges or internal resistance values. Validate pinout compatibility and thermal performance before substituting.