RN4988(TE85L,F)

Overview

The RN4988(TE85L,F) is a pre-biased dual bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single surface-mount package, featuring built-in bias resistors to reduce external component count. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical parameters include a transition frequency of 250MHz for the NPN element and 200MHz for the PNP element. The maximum power dissipation is rated at 200mW, with a DC current gain (hFE) of 80 and a saturation voltage of 300mV.

Feature Summary

• Integrates complementary NPN and PNP transistors with internal bias resistors in a compact footprint
• Simplifies circuit design by reducing the total number of required discrete components
• Provides high-speed switching capabilities suitable for digital logic interfacing

Applications

• Digital logic level shifting between different voltage domains
• Driver circuits for small-signal loads and relay coils
• Interface modules connecting microcontrollers to peripheral devices

Procurement Notes

Verify the specific suffix TE85L,F against official Toshiba documentation to confirm tape-and-reel packaging specifications. Ensure that the US6 package designation matches the target PCB land pattern requirements. Cross-reference the active status and RoHS compliance details directly from the manufacturer's latest datasheet before finalizing procurement orders.

Selection Notes

Select this component when a matched NPN/PNP pair with integrated biasing is required for space-constrained designs. Consider the 200mW power dissipation limit and the 50V voltage rating during thermal and electrical stress analysis. Verify that the 100mA current capacity meets the load requirements without exceeding the specified saturation voltage limits.

Part Context

This part belongs to the RN49xx series of pre-biased transistor arrays designed for general-purpose switching applications. The US6 package provides a standardized surface-mount form factor compatible with automated assembly processes. It serves as a consolidated alternative to discrete resistor-transistor combinations in modern electronic systems.

Replacement Considerations

Direct substitutes must match the dual NPN/PNP configuration, 50V rating, and US6 package. Verify equivalent hFE and transition frequency specifications to ensure signal integrity is maintained in high-speed switching applications.