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Product Detailed Parameters
- Description：NPN + PNP BRT Q1BSR47KOHM Q1BER2
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：47kOhms
- Resistor - Emitter Base (R2)：22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250MHz, 200MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
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Overview
The RN4989FE,LF(CT is a dual pre-biased bipolar junction transistor array containing one NPN and one PNP epitaxial type transistor in an ES6 surface-mount package. It features integrated bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of 50V for both transistors, a maximum collector current of 100mA, and a total power dissipation of 100mW. The typical transition frequency is 250MHz for the NPN section and 200MHz for the PNP section. The DC current gain (hFE) has a minimum value of 70 at 10mA and 5V. The input resistance (R1) typically measures 47kΩ.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Integrated bias resistors reduce external component count and assembly time
- Compact ES6 dual-type package suitable for high-density designs
Applications
- Switching circuits
- Inverter circuits
- Interfacing applications
- Driver circuits
Procurement Notes
Verify the specific ordering suffix required for your application environment. The RN4989FE,LF variant is designated for general use, while the RN4989FE,LXHF variant is AEC-Q101 qualified for automotive use. Confirm that the selected part number matches the intended operational context and quality requirements before finalizing procurement orders.
Selection Notes
Select this component when a compact dual transistor solution with built-in biasing is required for switching or driver applications. Ensure the 50V voltage rating and 100mA current capacity meet the circuit demands. Consider the AEC-Q101 qualification if the application involves automotive systems, requiring the LXHF suffix variant instead of the standard LF version.
Part Context
This device belongs to Toshiba's line of Silicon NPN/PNP Epitaxial Type Bias Resistor Built-in Transistors utilizing the PCT Process. It is designed to replace discrete resistor-transistor networks, offering space savings and improved consistency in mass production environments compared to individual component assemblies.
Replacement Considerations
RN4989FE,LF(CB
FAQ
What is the typical input resistance value for the RN4989FE?
The typical input resistance (R1) is 47 kΩ, with a range from 32.9 kΩ to 61.1 kΩ.
Is the RN4989FE suitable for automotive applications?
Yes, the RN4989FE,LXHF variant is AEC-Q101 qualified specifically for automotive use.
What are the absolute maximum ratings for collector-emitter voltage?
The absolute maximum collector-emitter voltage (VCEO) is 50V for the NPN transistor and -50V for the PNP transistor.
