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The RN4989FE,LXHF(CT is a dual pre-biased bipolar junction transistor array containing one NPN and one PNP epitaxial type transistor in an ES6 surface-mount package. It operates with a collector-emitter voltage of 50V and a maximum collector current of 100mA per transistor. The device features an integrated base resistor (R1) with a typical value of 47kΩ and a transition frequency (fT) of 250MHz for the NPN section. Total power dissipation is rated at 100mW, with a saturation voltage (VCE(sat)) maximum of 300mV at specified test conditions.
Verify the specific ordering suffix to confirm the intended application scope. The LXHF suffix indicates parts designated for unintended use rather than automotive deployment. Confirm RoHS compliance status and moisture sensitivity level prior to procurement to ensure compatibility with assembly processes.
Select this component when a compact dual BJT solution with built-in biasing is required for general-purpose switching or interfacing tasks. Ensure the 50V voltage rating and 100mA current limits meet circuit demands. Verify that the LXHF suffix aligns with non-automotive project requirements.
This part belongs to the RN4989 series of silicon NPN/PNP epitaxial transistors utilizing Toshiba's PCT process. The RN4989FE variant integrates bias resistors to simplify circuit design. The LXHF suffix specifically denotes the packaging and qualification tier for general electronic equipment rather than automotive-grade hardware.
RN4989FE,LF
The typical input resistance (R1) is 47 kΩ.
No, the LXHF suffix indicates the part is for unintended use. Automotive applications require the AEC-Q101 qualified variants such as RN4989FE,LF or RN4989FE,LXGF.
The transition frequency (fT) for the NPN section is typically 250 MHz.