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The RN4989,LXHF(CT is a pre-biased dual bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single surface-mount package, featuring built-in base bias resistors to simplify circuit design. The device offers a collector-emitter breakdown voltage of 50V and supports a maximum continuous collector current of 100mA. Power dissipation is rated at 200mW. The NPN section provides a transition frequency of 250MHz, while the PNP section operates at 200MHz. This component utilizes the US6 (SOT-363) package for compact mounting.
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Select this component when a compact dual BRT solution is required for simultaneous NPN and PNP switching tasks. The integrated resistors eliminate the need for external biasing networks, reducing assembly complexity. Consider the 50V rating and 100mA current limit to ensure adequate headroom for the specific load requirements.
This part belongs to Toshiba's series of Bias Resistor Built-in Transistors (BRT). These devices are designed to replace discrete resistor-transistor combinations, offering improved reliability and reduced footprint. The RN4989 specifically addresses applications needing complementary switching actions within a minimal package size.
Direct substitutes may include other dual BRTs with matching pinouts and electrical ratings. Verify compatibility regarding the internal resistor values and transition frequencies before substitution.