RN4989,LXHF(CT

RN4989,LXHF(CT

$0.31
  • Description:AUTO AEC-Q TR NPN + PNP BRT, Q1B
  • Series:-

SKU:4f72e3cb62d5 Category: Brand:

  
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Product Detailed Parameters

  • Description:AUTO AEC-Q TR NPN + PNP BRT, Q1B
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz, 200MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

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RN4989,LXHF(CT

Overview

The RN4989,LXHF(CT is a pre-biased dual bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single surface-mount package, featuring built-in base bias resistors to simplify circuit design. The device offers a collector-emitter breakdown voltage of 50V and supports a maximum continuous collector current of 100mA. Power dissipation is rated at 200mW. The NPN section provides a transition frequency of 250MHz, while the PNP section operates at 200MHz. This component utilizes the US6 (SOT-363) package for compact mounting.

Feature Summary

  • Integrates a dual configuration containing one NPN and one PNP pre-biased transistor in a single unit
  • Includes built-in base bias resistors to reduce external component count and board space
  • Designed for high-speed switching applications with specified transition frequencies for both transistor types

Applications

  • General-purpose logic circuits requiring level shifting or buffering
  • Switching applications in consumer electronics and industrial control systems
  • Driver stages for small-signal loads in portable devices

Procurement Notes

Verify that the ordering suffix matches the required tape and reel quantity specifications. Confirm RoHS compliance status and automotive qualification if applicable to the target application. Ensure the supplier source is authorized to guarantee authenticity and traceability of the semiconductor components.

Selection Notes

Select this component when a compact dual BRT solution is required for simultaneous NPN and PNP switching tasks. The integrated resistors eliminate the need for external biasing networks, reducing assembly complexity. Consider the 50V rating and 100mA current limit to ensure adequate headroom for the specific load requirements.

Part Context

This part belongs to Toshiba's series of Bias Resistor Built-in Transistors (BRT). These devices are designed to replace discrete resistor-transistor combinations, offering improved reliability and reduced footprint. The RN4989 specifically addresses applications needing complementary switching actions within a minimal package size.

Replacement Considerations

Direct substitutes may include other dual BRTs with matching pinouts and electrical ratings. Verify compatibility regarding the internal resistor values and transition frequencies before substitution.

RN4989,LXHF(CTRN4989,LXHF(CT
$0.31
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