RN4989(T5L,F,T)

RN4989(T5L,F,T)

$0.20
  • Description:TRANS NPN/PNP PREBIAS 0.2W US6
  • Series:-

SKU:c3a9da4c9c94 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS 0.2W US6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • Frequency - Transition:250MHz, 200MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

Download product information

RN4989(T5L,F,T)

Overview

The RN4989(T5L,F,T) is a pre-biased dual bipolar junction transistor (BJT) array featuring one NPN and one PNP unit in a surface-mount package. It offers a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. The device integrates bias resistors, specified as 47 kΩ for the NPN and 22 kΩ for the PNP, simplifying circuit design. Key electrical parameters include a transition frequency of 250MHz for the NPN and 200MHz for the PNP, with a maximum power dissipation of 200mW.

Feature Summary

  • Integrates internal bias resistors to reduce external component count and simplify circuit layout
  • Combines complementary NPN and PNP transistors in a single compact package for space efficiency
  • Designed for high-frequency applications with transition frequencies up to 250MHz

Applications

  • General-purpose switching circuits requiring compact dual-transistor solutions
  • Logic level shifting and interface circuits between different voltage domains
  • Driver stages for small-signal loads in consumer electronics

Procurement Notes

Verify the specific suffix (T5L, F, or T) matches the required packaging format, such as tape and reel quantities, as these denote handling specifications rather than electrical changes. Confirm RoHS compliance status if environmental regulations apply to your assembly process. Ensure the selected package variant aligns with your PCB footprint requirements, typically SOT-363 or US6.

Selection Notes

Select this component when a dual BJT configuration with integrated biasing is required to minimize board space and assembly steps. The 50V rating suits low-voltage digital logic interfaces. Consider the specific resistor values (47k/22k) to ensure proper base drive currents for your load conditions. This part is suitable for applications where standard discrete transistors would consume excessive area.

Part Context

This device belongs to Toshiba's line of Bias Resistor Built-in Transistors (BRT). These components combine transistors with built-in resistors to offer simplified designs compared to discrete alternatives. The RN4989 specifically provides a complementary pair, addressing needs for push-pull or differential signaling structures in compact form factors common in portable devices.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings against potential alternatives from other manufacturers before substitution.

RN4989(T5L,F,T)RN4989(T5L,F,T)
$0.20
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