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The RN4989(T5L,F,T) is a pre-biased dual bipolar junction transistor (BJT) array featuring one NPN and one PNP unit in a surface-mount package. It offers a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. The device integrates bias resistors, specified as 47 kΩ for the NPN and 22 kΩ for the PNP, simplifying circuit design. Key electrical parameters include a transition frequency of 250MHz for the NPN and 200MHz for the PNP, with a maximum power dissipation of 200mW.
Verify the specific suffix (T5L, F, or T) matches the required packaging format, such as tape and reel quantities, as these denote handling specifications rather than electrical changes. Confirm RoHS compliance status if environmental regulations apply to your assembly process. Ensure the selected package variant aligns with your PCB footprint requirements, typically SOT-363 or US6.
Select this component when a dual BJT configuration with integrated biasing is required to minimize board space and assembly steps. The 50V rating suits low-voltage digital logic interfaces. Consider the specific resistor values (47k/22k) to ensure proper base drive currents for your load conditions. This part is suitable for applications where standard discrete transistors would consume excessive area.
This device belongs to Toshiba's line of Bias Resistor Built-in Transistors (BRT). These components combine transistors with built-in resistors to offer simplified designs compared to discrete alternatives. The RN4989 specifically provides a complementary pair, addressing needs for push-pull or differential signaling structures in compact form factors common in portable devices.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings against potential alternatives from other manufacturers before substitution.