RN4989(TE85L,F)

Overview

The RN4989(TE85L,F) is a pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors within a single surface-mount package. The device supports a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V. Key electrical parameters include a DC current gain (hFE) of at least 80 at 10mA and 5V, and a saturation voltage of 300mV at 250µA base current and 5mA collector current. The integrated bias resistors are both 47kΩ. The component operates with a maximum power dissipation of 300mW and features a transition frequency of 200MHz.

Feature Summary

• Integrates dual NPN transistors with fixed bias resistors to reduce external component count
• Utilizes Extreme-Super-Mini (ESM) packaging for compact circuit board layout
• Designed for high-speed switching applications with specified transition frequency

Applications

• Switching circuits requiring compact form factors
• Inverter logic interfaces
• Driver circuits for low-power loads

Procurement Notes

Verify the specific suffix TE85L,F against the manufacturer's official datasheet to confirm tape and reel specifications. Ensure compatibility with standard surface mount assembly processes. Cross-reference the part number with authorized distributors to confirm current availability status and lead times prior to procurement planning.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to minimize board space. Compare the 47kΩ internal resistor values against circuit requirements to ensure proper base drive characteristics. Verify that the 50V voltage rating and 100mA current capacity meet the specific load conditions of the target application design.

Part Context

This component belongs to the RN49xx series of pre-biased transistors from Toshiba. These devices are engineered to replace discrete transistor and resistor combinations. The series is widely used in consumer electronics and industrial control systems where space efficiency and simplified assembly are critical design constraints.

Replacement Considerations

Consult official substitution guides for equivalent dual NPN pre-biased transistors. Verify pinout compatibility and electrical parameter matching before replacing the original component in existing designs.