RN4990FE,LF(CT

Overview

The RN4990FE,LF(CT is a pre-biased digital transistor array containing one NPN and one PNP bipolar junction transistor in an ES6 surface-mount package. It operates with a collector-emitter voltage of 50V and a continuous collector current of 100mA per device. The integrated bias resistor (R1) has a typical value of 4.7kΩ. DC current gain (hFE) is typically 120 at 1mA for the NPN and 120 at -1mA for the PNP. Transition frequencies are typically 250MHz for the NPN and 200MHz for the PNP. Maximum power dissipation is 100mW.

Feature Summary

• AEC-Q101 qualified for automotive applications
• Dual configuration in an extreme-super-mini package
• Integrated bias resistors reduce external component count

Applications

• Switching circuits
• Inverter circuits
• Interfacing
• Driver circuits

Procurement Notes

Verify the specific ordering suffix to confirm the intended application scope. The RN4990FE,LXHF variant is designated for unintended use and must not be utilized in automotive contexts. Confirm RoHS compliance status through official Toshiba channels before procurement.

Selection Notes

Select this component when a compact dual transistor solution with built-in base resistors is required. Ensure the 50V collector-emitter rating and 100mA current limits meet circuit requirements. Verify that the ES6 package dimensions fit the available PCB space constraints.

Part Context

This part belongs to the RN49xx series of bias resistor built-in transistors manufactured by Toshiba Semiconductor and Storage. These devices integrate NPN/PNP pairs into small packages to simplify circuit design and reduce assembly costs compared to discrete transistor implementations.

Replacement Considerations

Consult the official datasheet for equivalent circuit diagrams and pin assignments when evaluating alternative components. Verify that any substitute matches the 50V voltage rating, 100mA current capacity, and ES6 package footprint.