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The RN4990FE,LXHF(CT is a pre-biased digital transistor array from Toshiba Semiconductor and Storage, featuring one NPN and one PNP bipolar junction transistor in an ES6 package. It operates with a collector-emitter voltage of 50V and a continuous collector current of 100mA per device. The integrated bias resistor (R1) has a typical value of 4.7kΩ. Transition frequencies are typically 250MHz for the NPN section and 200MHz for the PNP section. DC current gain (hFE) is specified at a minimum of 120. Power dissipation is limited to 100mW.
Verify the specific ordering suffix against the official orderable part number list to ensure correct qualification level. The LXHF suffix designates parts intended for unintended use rather than automotive or general use applications. Confirm RoHS compliance status directly with the manufacturer before procurement.
Select this component when a complementary NPN/PNP pair is required in a minimal footprint. The ES6 package supports surface-mount assembly. Ensure the 50V collector-emitter voltage and 100mA current ratings meet the circuit requirements. Verify that the 100mW total power dissipation limit accommodates the thermal conditions of the final application.
This component belongs to the RN4990 series of bias resistor built-in transistors manufactured using Toshiba's PCT process. The series offers various packaging options and qualification levels. The RN4990FE variant specifically provides a dual transistor solution designed to simplify circuit design by replacing discrete transistors and their associated base resistors.
Direct replacements include other RN4990FE variants such as RN4990FE,LF for general use or RN4990FE,LXGF for automotive applications, provided the package and electrical characteristics remain compatible.