RN4990(T5L,F,T)

Overview

The RN4990(T5L,F,T) is a pre-biased dual bipolar junction transistor (BJT) array from Toshiba Semiconductor and Storage, integrating one NPN and one PNP transistor within an ultra super mini US6 package. It features built-in bias resistors to simplify circuit design and reduce component count. The device operates with a collector-emitter voltage of 50V and a maximum collector current of 100mA per element. Common electrical characteristics include a total power dissipation of 200mW and an input resistor value ranging from 3.29kΩ to 6.11kΩ. Transition frequencies are specified at 250MHz for the NPN section and 200MHz for the PNP section.

Feature Summary

• Integrates one NPN and one PNP transistor in a single surface-mount package
• Includes built-in bias resistors to minimize external components
• AEC-Q101 qualified for automotive reliability standards

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official distributor catalogs to confirm packaging format and tape-and-reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized sales representatives prior to procurement. Ensure that the selected variant matches the required lead frame and marking codes for your assembly process.

Selection Notes

Select this component when space constraints require a compact dual BJT solution with integrated biasing. Verify that the 50V collector-emitter breakdown voltage meets the system requirements. Check that the 200mW total power dissipation rating accommodates the thermal conditions of the target application without exceeding the 150°C junction temperature limit.

Part Context

This part belongs to the RN49xx series of pre-biased transistors manufactured by Toshiba Electronic Devices & Storage Corporation. The series utilizes a silicon epitaxial type PCT process. The RN4990 specifically combines complementary NPN and PNP elements into a single US6 package, designed to replace discrete transistor pairs and their associated biasing networks.

Replacement Considerations

Consult the official Toshiba replacement list for verified cross-reference part numbers. Ensure any substitute maintains the same US6 package dimensions and compatible pinout configuration.