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Product Detailed Parameters
- Description：NPN + PNP BRT Q1BSR=4.7KOHM Q1BE
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：4.7kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250MHz, 200MHz
- Power - Max：200mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：US6
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Overview
The RN4990(TE85L,F) is a dual silicon NPN/PNP epitaxial transistor with built-in bias resistors, housed in an ultra super mini US6 package. It features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA for both Q1 (NPN) and Q2 (PNP). The total power dissipation is rated at 200mW. Electrical characteristics include a typical DC current gain (hFE) of 120 to 700 for the NPN device and 120 to 400 for the PNP device. The transition frequency is typically 250MHz for Q1 and 200MHz for Q2. The internal input resistor value is nominally 4.7kΩ.
Feature Summary
- Integrates two transistors (one NPN, one PNP) with built-in bias resistors into a single compact component.
- Simplifies circuit design by reducing the quantity of external parts and manufacturing processes.
- Supports switching, inverter, interface, and driver circuit applications.
- AEC-Q101 qualified for automotive reliability standards.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify AEC-Q101 qualification status directly with Toshiba sales representatives, as detailed information requires specific inquiry. Confirm RoHS compatibility and environmental compliance with the manufacturer before procurement. Ensure the US6 package dimensions align with the target PCB layout constraints.
Selection Notes
Select this component when a complementary NPN/PNP pair with integrated biasing is required in a minimal footprint. Verify that the 200mW total power dissipation rating accommodates the thermal requirements of both devices simultaneously. Check that the 4.7kΩ nominal input resistance matches the drive signal requirements for the intended logic levels.
Part Context
This part belongs to the RN series of digital transistors manufactured by Toshiba Semiconductor and Storage. It utilizes the PCT process technology for silicon epitaxial transistors. The US6 package provides a six-lead ultra super mini form factor designed for high-density surface mount assembly.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Consult Toshiba sales for equivalent alternatives if sourcing constraints exist.
FAQ
What is the difference between Q1 and Q2 in the RN4990?
Q1 is an NPN transistor and Q2 is a PNP transistor. They share a common package but have opposite polarities and distinct electrical characteristics, such as different hFE ranges and transition frequencies.
What is the nominal value of the built-in bias resistor?
The typical input resistor value (R1) is 4.7 kΩ, with a minimum of 3.29 kΩ and a maximum of 6.11 kΩ.
Is the RN4990 suitable for automotive applications?
Yes, the component is AEC-Q101 qualified, indicating it meets automotive electronic component reliability standards, though specific application details should be verified with Toshiba sales.
