ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：NPN + PNP BRT Q1BSR10KOHM Q1BERI
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：10kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250MHz, 200MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：ES6
Download product information
Overview
The RN4991FE,LF(CT is a dual bias resistor built-in transistor array containing one NPN and one PNP epitaxial silicon bipolar junction transistor. It operates with a collector-emitter voltage of 50V and a maximum collector current of 100mA per transistor. The integrated input resistance is typically 10kΩ. Transition frequencies are rated at 250MHz for the NPN and 200MHz for the PNP. DC current gain (hFE) is a minimum of 120. Collector-emitter saturation voltage is 300mV maximum. Total power dissipation is 100mW in an ES6 surface-mount package.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Integrated bias resistors reduce external component count and assembly time
- Compact ES6 dual-type package design
Applications
- Switching circuits
- Inverter circuits
- Interfacing applications
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official part number list to confirm the intended application grade. The LF suffix indicates general use, while LXHF denotes automotive qualification under AEC-Q101. Ensure the selected variant matches the required environmental and reliability specifications before procurement.
Selection Notes
Select this component when a compact dual BJT solution with built-in base resistors is required. The device simplifies circuit design by eliminating external biasing components. Verify that the 100mA collector current and 100mW total power dissipation limits meet the system requirements. Confirm the transition frequency meets the switching speed needs for the target application.
Part Context
The RN4991FE belongs to Toshiba's line of bias resistor built-in transistors utilizing a PCT process. This series integrates NPN and PNP transistors with internal resistors into a single small package. The product family targets applications requiring space-saving designs and reduced assembly complexity for signal processing and driver stages.
Replacement Considerations
Consult the official datasheet for equivalent part numbers. The RN4991FE,LXGF is listed as an alternative within the same series. Verify pin compatibility and electrical parameters before substitution.
FAQ
What is the typical value of the integrated input resistance?
The typical input resistance (R1) is 10kΩ.
Is the RN4991FE suitable for automotive applications?
Yes, specific variants such as the RN4991FE,LXHF are AEC-Q101 qualified for automotive use.
What is the maximum collector current rating?
The maximum collector current (IC) is 100mA.
