RN4991FE,LXHF(CT

RN4991FE,LXHF(CT

$0.34
  • Description:AUTO AEC-Q TR NPN + PNP Q1BSR=10
  • Series:-

SKU:42c14c3ed7bd Category: Brand:

  
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Product Detailed Parameters

  • Description:AUTO AEC-Q TR NPN + PNP Q1BSR=10
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250MHz, 200MHz
  • Power - Max:100mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

Download product information

RN4991FE,LXHF(CT

Overview

The RN4991FE,LXHF(CT is a pre-biased dual transistor array containing one NPN and one PNP silicon epitaxial transistor in an ES6 surface-mount package. It features an integrated bias resistor of 10 kΩ typical value. The device supports a collector current of 100 mA, with maximum collector-emitter voltages of 50 V for the NPN side and -50 V for the PNP side. Transition frequencies are rated at 250 MHz for the NPN element and 200 MHz for the PNP element. DC current gain (hFE) is specified as a minimum of 120. Total power dissipation is limited to 100 mW.

Feature Summary

  • AEC-Q101 qualified for automotive reliability standards
  • Integrated bias resistors reduce external component count and assembly time
  • Compact ES6 dual-type package design

Applications

  • Switching circuits
  • Inverter circuits
  • Interfacing applications
  • Driver circuits

Procurement Notes

Verify that the specific ordering suffix matches the required application grade. The LXHF variant is designated for unintended use rather than standard automotive deployment. Confirm RoHS compliance status directly with the manufacturer or authorized distributor before finalizing procurement specifications.

Selection Notes

Select this component when a compact dual configuration with built-in biasing is required for signal inversion or driver stages. Ensure the 100 mA collector current limit and 100 mW total power dissipation constraints align with the target circuit requirements. Verify that the 10 kΩ internal resistance meets the necessary base drive conditions.

Part Context

This part belongs to Toshiba's RN49xx series of bias resistor built-in transistors. These devices integrate NPN and PNP elements into a single small package to simplify circuit layouts. The RN4991FE specifically utilizes the ES6 footprint, offering a space-saving alternative to discrete transistor arrangements in consumer and industrial electronics.

Replacement Considerations

Direct substitutes include other RN49xx series parts from Toshiba such as the RN4981FE or RN4901. Verify pin compatibility and electrical ratings against the original design specifications before implementing any cross-model replacements.

FAQ

What is the typical value of the integrated bias resistor?

The input resistance (R1) has a typical value of 10 kΩ.

Is this component suitable for automotive applications?

While the RN4991FE family is AEC-Q101 qualified, the LXHF ordering suffix is explicitly designated for unintended use. Automotive applications require verifying the specific orderable part number list for valid automotive grades.

What are the transition frequencies for the NPN and PNP elements?

The NPN element (Q1) has a transition frequency of 250 MHz, while the PNP element (Q2) operates at 200 MHz.

RN4991FE,LXHF(CTRN4991FE,LXHF(CT
$0.34
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