RN4991(T5L,F,T)

RN4991(T5L,F,T)

$0.09
  • Description:TRANS NPN/PNP PREBIAS 0.2W US6
  • Series:-

SKU:b64da831ebe7 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS 0.2W US6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • Frequency - Transition:250MHz, 200MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

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RN4991(T5L,F,T)

Overview

The RN4991(T5L,F,T) is a pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single surface-mount package. The device supports a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA. Key electrical parameters include a DC current gain (hFE) minimum of 30 at 10mA and 5V, with a saturation voltage of 300mV at 250µA base current and 5mA collector current. The transition frequency is rated at 250MHz for the NPN and 200MHz for the PNP element, while power dissipation is limited to 200mW.

Feature Summary

  • Integrates complementary NPN and PNP transistors in a dual pre-biased configuration
  • Includes internal base resistors to simplify circuit design and reduce component count
  • Optimized for high-speed switching applications with specified transition frequencies

Applications

  • Digital logic interface circuits requiring level shifting or buffering
  • Switching applications in consumer electronics and industrial control systems
  • Driver stages for small-signal loads in compact printed circuit board designs

Procurement Notes

Verify the specific suffix T5L,F,T against official Toshiba documentation to confirm packaging type and tape-and-reel specifications. Ensure compliance with RoHS3 standards as indicated for the LF variant. Cross-reference the manufacturer part number with authorized distributor databases to confirm current availability status and lead times prior to procurement planning.

Selection Notes

Select this component when a matched NPN/PNP pair with integrated biasing is required for space-constrained designs. Verify that the 50V voltage rating and 100mA current capacity meet the specific load requirements. Confirm that the US6 package dimensions are compatible with the target PCB footprint and that the thermal dissipation limits are sufficient for the operating environment.

Part Context

This component belongs to the RN49xx series of pre-biased transistors from Toshiba Semiconductor and Storage. These devices are designed to replace discrete resistor-transistor networks, offering improved reliability and reduced assembly time. The RN4991 specifically provides a complementary NPN/PNP configuration, distinguishing it from single-type arrays like the RN19xx or RN29xx series.

Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Potential alternatives may include other manufacturers' complementary pre-biased transistor pairs in SOT-363 or US6 packages, provided pinouts and electrical characteristics match exactly.

RN4991(T5L,F,T)RN4991(T5L,F,T)
$0.09
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