RN49A1FE(TE85L,F)

RN49A1FE(TE85L,F)

  • Description:PNP + NPN BRT Q1BSR=2.2KOHM Q1BE
  • Series:-

SKU:e5fa62a0fd08 Category: Brand:

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Product Detailed Parameters

  • Description:PNP + NPN BRT Q1BSR=2.2KOHM Q1BE
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms, 22kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200MHz, 250MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

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RN49A1FE(TE85L,F)

Overview

The RN49A1FE(TE85L,F) is a Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN transistor with two internal bias resistors into a single surface-mount package, specifically the ES6 configuration. This component is designed to simplify circuit design by reducing the external component count required for transistor biasing. The device operates with a maximum collector-emitter voltage of 50V and supports a continuous collector current of 100mA. Key electrical parameters include a DC current gain (hFE) of at least 100 and a base resistor (R1) value of 10 kΩ. The unit is RoHS compliant and suitable for high-density mounting applications.

Feature Summary

  • Integrates an NPN transistor with dual bias resistors to minimize external parts count
  • Utilizes Extreme-Super-Mini (ES6) surface-mount packaging for compact board layouts
  • Simplifies switching, inverter, and driver circuit designs through built-in pre-biasing

Applications

  • Switching circuits requiring simplified bias networks
  • Inverter logic gates and interface circuits
  • Driver circuits for low-power loads

Procurement Notes

Verify the specific ordering suffix TE85L,F against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications. Ensure that the ES6 package dimensions align with your PCB footprint requirements. Cross-reference the RoHS compliance status with current environmental regulations for your target market before finalizing procurement orders.

Selection Notes

Select this component when a single NPN switch with integrated biasing is preferred over discrete components. The 10 kΩ base resistor value is suitable for standard logic level interfacing. Consider the 50V Vceo rating for general-purpose low-voltage switching tasks. Verify thermal dissipation capabilities within the small ES6 package for the intended duty cycle.

Part Context

This part belongs to Toshiba's extensive line of digital transistors, which are engineered to replace multiple discrete resistors and transistors. The RN49A series typically includes complementary pairs or single units; the FE suffix indicates an NPN/PNP pair in some contexts, but the TE85L,F designation specifies the ES6 package variant. These devices are widely used in consumer electronics and industrial control boards where space efficiency is critical.

Replacement Considerations

Check for direct equivalents from other manufacturers offering BRTs in the ES6 package with similar 50V/100mA ratings. Verify pinout compatibility and resistance values if substituting with generic digital transistors.

RN49A1FE(TE85L,F)RN49A1FE(TE85L,F)

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